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Typical Characteristics
STARTING T J = 25 C
4000
1000
100
10us
100us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
o
10
STARTING T J = 150 C
1
LIMITED
BY PACKAGE
OPERATION IN THIS
SINGLE PULSE
1ms
10
o
T C = 25 o C
0.1
1
AREA MAY BE T J = MAX RATED 10ms
LIMITED BY r DS(on)
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
DC
60
1
0.01
0.1 1 10 100
t AV , TIME IN AVALANCHE (ms)
1000 5000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
V GS = 10V PULSE DURATION = 80 μ s
200
150
100
50
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
T J = 175 o C
T J = 25 o C
T J = -55 o C
200
150
100
50
V GS = 5V
V GS = 3.5V
DUTY CYCLE = 0.5% MAX
V GS = 3V
0
0
1
2
3
4
0
0.0
0.5
1.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
4
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T J = 175 o C
1.6
1.4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
2
1.0
1
T J = 25 o C
0.8
I D = 80A
V GS = 10V
0
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.6
-80
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8832 Rev. A1
5
www.fairchildsemi.com
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